Reaction - bonded sic was prepared by using melt silicon infiltrated carbon perform at 1500 c ; then evaporated the resist silicon at 1800 c for 2h in vacuum and the porous body of sic was attained . using melting mosi2 infiltrated sic body at 2050 c we got the desitive mosi2 / sic composite 将c质坯体在1500左右制得rbsc (反应烧结sic )材料，采用真空下1800脱除rbsc中的残余si的方法，获得了多孔的sic坯体，用mosi _ 2在2050直接浸渗坯体得到了致密的mosi _ 2 sic复合材料。
